NoleTec Microwave Electronics is a Swedish company that specializes in non-ITAR high power and high performance RF and microwave transistors, internally matched 50 Ohm modules and pallets, based on GaN on SiC die of the leading manufacturers. The company contains a team of seasoned engineers with vast experience of RF power products from semiconductor level to system level and from advanced R&D to high volume manufacturing.
RF and microwave transistors, 50 Ohm modules and pallets based on GaN on SiC
- Design and manufacturing of RF & microwave transistors and amplifier modules/subsystems for S-band, C-band and X-band.
- Advanced amplifier architectures for communication systems, ultra linear and high efficiency amplifiers utilizing multi-branch Doherty concepts and DPD correction or other architectures.
- Pulsed amplifiers.
Internally matched RF power modules for radar systems at L-band, C-band and X-bandNoletec mainly develops customer specific products, but has a range of standard RF transistors and pallets for Radar systems. They are based on the latest Gallium Nitride on Silicon Carbide technology from leading US and Asian manufacturers. As the transistor die are ITAR-free, so are Noletec's packaged transistors and pallets. Please contact us for more technical information, price and lead time, and to receive data sheets.
|Typical Psat performance|
|Output power (W)||Gain
|Efficiency (%)||Vdd (V)||Internal
|NGN6472L1S-M25||6 400-7 200||25||8.5||50||32||50 Ohm|
|NGN6472L1S-M100||6 400-7 200||100||10||45||32||50 Ohm|
|NGN5359H1S-M45||5 300-5 900||45||11||50||50||50 Ohm|
|NGN5359H1S-M90||5 300-5 900||90||11||50||50||50 Ohm|
|NGN5359H1S-M175||5 300-5 900||175||11||50||50||50 Ohm|
|NGN5359H1S-M220||5 300-5 900||220||11||45||50||50 Ohm|
|X- Band||NGM9098M7S-M10*||9000-10500||10||18||40||40||50 Ohm|