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OMMIC is a European manufacturer of microwave and millimetre wave MMICs using III-V compound semiconductor materials GaAs (Gallium Arsenide), GaN (Gallium Nitride) and InP (Indium Phosphide).

Existing Epitaxial Processes

  • GaAs MESFET (metal-semiconductor field effect transistor) and GaAs HFET (heterostructure FET)
  • GaAs pHEMT (pseudomorphic high electron mobility transistor) and InP pHEMT
  • GaAs mHEMT (metamorphic high electron mobility transistor)
  • GaAs/GaInP HBT (heterojunction bipolar transistor)
  • InP/GaAsSb HBT and DHBT (double heterojunction bipolar transistor
These processes are also offered as foundry service.

Back-end options include microwave packages and space qualified via hole process, Au bumps and AuSn (Gold-Tin) bumps

Target markets are telecom (radio base stations and radio links), aerospace, defence and RF test equipment. The products are ITAR-free.

Download the new OMMIC catalogue of non-ITAR MMICs

Microwave and Millimetrewave MMIC Product Lines

  • Broadband Low Noise Microwave Amplifiers, as die or in QFN packages, 200MHz  to 160GHz, noise figure <0,5dB up to 7GHz.
  • Microwave Power Amplifiers as die, 8GHz to 77GHz, 22dBm to 41dBm output power, bandwidth 10% to 30%.
  • Wideband Amplifiers as die, DC to 54GHz, 2dB noise figure, 13dB to 16dB gain.
  • Transimpedance Amplifiers with differential output, for 2,5Gbit/s and 10Gbit/s, 72dBΩ to 76dBΩ gain.
  • Digital 6-bit Phase Shifters for 4GHz to 18GHz, 360° phase control, very small phase error.
  • Digital 6-bit Attenuators, 0.1GHz to 18GHz, small attenuation error <0,4dB.
  • Wideband Mixers, 0.1GHz to 10GHz, passive and active versions.
  • Corechips (phase shifter + LNA or phase shifter + attenuator + switch) for X-band and C-band radar.


OMMIC non-ITAR MMIC